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SFF1004G TO-220F package MOS field effect transistor controlled silicon triode integrated circuit chip IC

0.0 0
1000 - 9999 p 1000 - 9999 pieces
$0.26
10000 - 19999 p 10000 - 19999 pieces
$0.25
> 20000 p > 20000 pieces
$0.24
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Quantity: (Min 1000)
Availability: 22300 in stock
Products subtotal: $0.26
Est. Landed Cost
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Flexible Delivery Options
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Full Support from Sourcing to Shipping

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Supplier info

Trading Medal
Returning Customers
57%
Overall Service
4
Product Accuracy
5
Trading Medal

on 1688.com (Alibaba's domestic wholesale platform), the trading medal is a ranking system for verified sellers that reflects their transaction performance over the past 30 days. It ranges from 1-5, with 5 being the highest and is determined by two factors - total transaction amount and total unique orders (excluding fake, sample, refunded or canceled orders).

These rankings are meant to help you understand which stores are active, reliable and trustworthy.

Returning Customers

This is based on buyer loyalty and store performance. It shows how many customers return to purchase again from the supplier over a 90 day time period.

Overall Service

This is the overall service rating, summarizing the supplier's full scope of experience.

Product Accuracy

The accuracy and clarity of the supplier's offers: product descriptions, specifications, pricing, and terms.

Product specifications

Brand:
GXDZ
Model:
SFF1004G
Encapsulation:
Component configuration sheet
Consult Unit price/minimum batch
Silicon controlled MOS field effect transistor
Two triode integrated circuit chip IC
Batch number:
New Year
Transistor polarity:
Two triode integrated IC
Collector breakdown voltage (VCEO):
MOS field effect transistor unidirectional bidirectional controlled silicon
Maximum collector current (Icm):
Aluminum electrolytic Mica and Teflon niobium oxide tantalum adjustable silicon film Super ceramic array network capacitor
Current amplification factor (hFE):
Fast standard Bridge-type Schottky ultra-high speed rectifier array rectifier equipment
Characteristic frequency:
N/P channel dual-channel automotive MOSFET array module field effect transistor
Maximum dissipation power:
SCR bidirectional trigger diode DIAC high voltage trigger diode SIDAC bidirectional Crystal TRIAC thyristor
Operating temperature range:
IGBT module JFETs bipolar BJT pre-bias bipolar RF switch Darlington power digital resistor (RET) composite transistor
Installation type:
PIN Small signal switch MHz fast recovery variable volume Zener voltage regulator TVS transient suppression ESD universal power rectifier diode
Application Field:
Mechanical equipment
Mos field effect transistor:
Drive analog logic embedded interface clock timing storage data converter amplifier optocoupler wireless RF simulator chip integrated circuit IC
Unidirectional bidirectional thyristor:
MOS field effect transistor unidirectional bidirectional controlled silicon
TVS ESD:
PIN Small signal switch MHz varactor Zener (voltage regulator) TVS transient suppression ESD universal power rectifier diode

Description

SFF1004G TO-220F packaged MOSFET, thyristor, diode, and transistor integrated circuit chip IC
SFF1004G TO-220F package MOS field effect transistor controlled silicon triode integrated circuit chip IC

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SFF1004G TO-220F package MOS field effect transistor controlled silicon triode integrated circuit chip IC